RFD16N05LSM
Test Circuits and Waveforms
V DS
BV DSS
L
t P
V DS
VARY t P TO OBTAIN
REQUIRED PEAK I AS
R G
+
V DD
I AS
V DD
V GS
DUT
-
0V
t P
I AS
0.01 ?
0
t AV
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
t ON
t d(ON)
t r
t OFF
t d(OFF)
t f
R L
V DS
90%
90%
+
R G
-
V DD
0
10%
10%
DUT
90%
V GS
50%
50%
V GS
0
10%
PULSE WIDTH
FIGURE 15. SWITCHING TIME TEST CIRCUIT
V DS
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
(ISOLATED
SUPPLY)
V DD
12V
BATTERY
0.2 μ F
50k ?
0.3 μ F
SAME TYPE
AS DUT
Q gs
Q gd
Q g(TOT)
V GS
D
V DS
G
DUT
0
0
I G(REF)
S
V DS
I G(REF)
I G CURRENT
SAMPLING
I D CURRENT
SAMPLING
RESISTOR
RESISTOR
0
FIGURE 17. GATE CHARGE TEST CIRCUIT
?2003 Fairchild Semiconductor Corporation
FIGURE 18. GATE CHARGE WAVEFORMS
RFD16N05LSM Rev. C1
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相关代理商/技术参数
RFD16N05LSM 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK
RFD16N05LSM_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD16N05LSM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD16N05LSM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD16N05NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N05SM 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD16N05SM_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N05SM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube